Result Details
Advanced VLSI Circuits Simulation
Kunovský Jiří, doc. Ing., CSc., DITS (FIT)
The paper deals with very accurate and effective simulation of Complementary Metal-Oxide-Semiconductor (CMOS) transistors which are used to construct basic logic gates (inverter, NAND and NOR) and their composites (XOR, AND, OR). The transistors are substituted by a resistor-capacitor (RC) circuit and the circuit is described by a system of differential algebraic equations (DAEs). These equations are numerically solved by the variable-step, variable-order Modern Taylor Series Method (MTSM). The same approach can be used for VLSI simulation - it was implemented by the corresponding author in a general purpose programming language. This approach is faster than the state of the art (SPICE) and uses less memory.
circuit simulation, VLSI circuits, Taylor series method, initial value problems
@inproceedings{BUT163432,
author="Filip {Kocina} and Jiří {Kunovský}",
title="Advanced VLSI Circuits Simulation",
booktitle="Proceedings of the 2017 International Conference on High Performance Computing & Simulation (HPCS 2017)",
year="2017",
pages="526--533",
publisher="Institute of Electrical and Electronics Engineers",
address="Genoa",
doi="10.1109/HPCS.2017.84",
isbn="978-1-5386-3250-5",
url="https://ieeexplore.ieee.org/document/8035123"
}IT4Innovations excellence in science, MŠMT, Národní program udržitelnosti II, LQ1602, start: 2016-01-01, end: 2020-12-31, completed