Result Details

Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing

BENEŠ, P., MATĚJKA, F., VRBA, R., KOLAŘÍK, V. Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing. In TEMI 2001 trends in electrical Measurement and Instrumentation. Lisbon, Portugal: Instituto de Telecomunicacoes, 2001. 3 p. ISBN: 972-98115-4-7.
Type
conference paper
Language
English
Authors
Beneš Petr, doc. Ing., Ph.D.
Matějka František, Mgr.
Vrba Radimír, prof. Ing., CSc.
Kolařík Vladimír, doc. Ing., Ph.D.
Abstract

Sensitive pressure sensor with nitride membrane and optoelectronic read-out system is described. Measured pressure is transformed into thick layer nitride membrane deflection. Nitride membrane serves as a mirror for laser beam and can move reflected laser mark. Mark’s position is sensed using position sensing device – fotolateral diode. Diode double current signal is amplified and conditioned digitally by ADuC 812 microcomputer. This one chip microcomputer provides an IEEE 1451.2 interface.

Published
2001
Pages
3
Proceedings
TEMI 2001 trends in electrical Measurement and Instrumentation
Conference
TEMI 2001 11th IMEKO TC-4 Symposium on Trends in Electrical Measurement and Instrumentation
ISBN
972-98115-4-7
Publisher
Instituto de Telecomunicacoes
Place
Lisbon, Portugal
BibTeX 
@inproceedings{BUT6231,
  author="Petr {Beneš} and František {Matějka} and Radimír {Vrba} and Vladimír {Kolařík}",
  title="Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing",
  booktitle="TEMI 2001 trends in electrical Measurement and Instrumentation",
  year="2001",
  pages="3",
  publisher="Instituto de Telecomunicacoes",
  address="Lisbon, Portugal",
  isbn="972-98115-4-7"
}
Departments
Department of Control and Instrumentation (UAMT)
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