Detail výsledku

Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing

BENEŠ, P., MATĚJKA, F., VRBA, R., KOLAŘÍK, V. Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing. In TEMI 2001 trends in electrical Measurement and Instrumentation. Lisbon, Portugal: Instituto de Telecomunicacoes, 2001. 3 p. ISBN: 972-98115-4-7.
Typ
článek ve sborníku konference
Jazyk
anglicky
Autoři
Beneš Petr, doc. Ing., Ph.D.
Matějka František, Mgr.
Vrba Radimír, prof. Ing., CSc.
Kolařík Vladimír, doc. Ing., Ph.D.
Abstrakt

Sensitive pressure sensor with nitride membrane and optoelectronic read-out system is described. Measured pressure is transformed into thick layer nitride membrane deflection. Nitride membrane serves as a mirror for laser beam and can move reflected laser mark. Mark’s position is sensed using position sensing device – fotolateral diode. Diode double current signal is amplified and conditioned digitally by ADuC 812 microcomputer. This one chip microcomputer provides an IEEE 1451.2 interface.

Rok
2001
Strany
3
Sborník
TEMI 2001 trends in electrical Measurement and Instrumentation
Konference
TEMI 2001 11th IMEKO TC-4 Symposium on Trends in Electrical Measurement and Instrumentation
ISBN
972-98115-4-7
Vydavatel
Instituto de Telecomunicacoes
Místo
Lisbon, Portugal
BibTeX 
@inproceedings{BUT6231,
  author="Petr {Beneš} and František {Matějka} and Radimír {Vrba} and Vladimír {Kolařík}",
  title="Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing",
  booktitle="TEMI 2001 trends in electrical Measurement and Instrumentation",
  year="2001",
  pages="3",
  publisher="Instituto de Telecomunicacoes",
  address="Lisbon, Portugal",
  isbn="972-98115-4-7"
}
Pracoviště
Ústav automatizace a měřicí techniky (UAMT)
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