Result Details

Semiconductor devices simulation using drift diffusion scheme

POKORNÝ, M.; RAIDA, Z. Semiconductor devices simulation using drift diffusion scheme. In Sborník příspěvků konference ZVŮLE 2008. Brno: VUT v Brně, FEKT, 2008. p. 200-203. ISBN: 978-80-214-3709-8.
Type
conference paper
Language
English
Authors
Pokorný Michal, Ing., Ph.D., UREL (FEEC)
Raida Zbyněk, prof. Dr. Ing., UREL (FEEC)
Abstract

The paper deals with the numerical modeling of the semiconductor devices. The drift-diffusion macro model of the free carriers transport is discussed and combined with the Poisson equation to evaluation of device features. The thermal phenomenon is considered in correct physical model of the power components. The basic semiconductor equations are summarized, and modeling issues are discussed. The demonstrative simulation of the Gunn diode is performed in COMSOL Multiphysics computation environment using finite element method.

Keywords

Gunn effect, FEM, COMSOL, drift-diffusion scheme, multi-physical model.

Published
2008
Pages
200–203
Proceedings
Sborník příspěvků konference ZVŮLE 2008
Conference
IEEE Workshop Zvůle 2008
ISBN
978-80-214-3709-8
Publisher
VUT v Brně, FEKT
Place
Brno
BibTeX 
@inproceedings{BUT27691,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Semiconductor devices simulation using drift diffusion scheme",
  booktitle="Sborník příspěvků konference ZVŮLE 2008",
  year="2008",
  pages="200--203",
  publisher="VUT v Brně, FEKT",
  address="Brno",
  isbn="978-80-214-3709-8"
}
Departments
Department of Radio Electronics (UREL)
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