Result Details
Modeling of Microwave Semiconductor Diodes
POKORNÝ, M.; RAIDA, Z. Modeling of Microwave Semiconductor Diodes. Radioengineering, 2008, vol. 17, no. 3, p. 47-52. ISSN: 1210-2512.
Type
journal article
Language
English
Authors
Pokorný Michal, Ing., Ph.D., UREL (FEEC)
Raida Zbyněk, prof. Dr. Ing., UREL (FEEC)
Raida Zbyněk, prof. Dr. Ing., UREL (FEEC)
Abstract
The paper deals with the multi-physical modeling of the microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equations are summarized, and modeling issues are discussed. The simulation of the Gunn effect in transferred electron devices and carrier injection effect in PIN diodes are the aim of investigation and discussion. The analysis was performed in COMSOL Multiphysics computing environment using finite element method.
Keywords
Gunn effect, carrier injection effect, PIN, FEM, COMSOL, drift-diffusion scheme, multi-physical model.
Published
2008
Pages
47–52
Journal
Radioengineering, vol. 17, no. 3, ISSN 1210-2512
Publisher
Ústav radioelektroniky, VUT v Brně
Place
Brno
BibTeX
@article{BUT49090,
author="Michal {Pokorný} and Zbyněk {Raida}",
title="Modeling of Microwave Semiconductor Diodes",
journal="Radioengineering",
year="2008",
volume="17",
number="3",
pages="47--52",
issn="1210-2512"
}
Departments