Result Details

Transmission Line on Semiconductor Substrate with Distributed Amplification

POKORNÝ, M.; RAIDA, Z. Transmission Line on Semiconductor Substrate with Distributed Amplification. Radioengineering, 2010, vol. 19, no. 2, p. 307-312. ISSN: 1210-2512.
Type
journal article
Language
English
Authors
Pokorný Michal, Ing., Ph.D., UREL (FEEC)
Raida Zbyněk, prof. Dr. Ing., CEITEC (CEITEC), UREL (FEEC)
Abstract

In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.

Keywords

GaAs, active, mictrostrip, millimeter-wave, FEM, Gunn, thermal, COMSOL

Published
2010
Pages
307–312
Journal
Radioengineering, vol. 19, no. 2, ISSN 1210-2512
Publisher
Ústav radioelektroniky, VUT v Brně
Place
Brno
UT WoS
000278742400014
BibTeX 
@article{BUT49178,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Transmission Line on Semiconductor Substrate with Distributed Amplification",
  journal="Radioengineering",
  year="2010",
  volume="19",
  number="2",
  pages="307--312",
  issn="1210-2512"
}
Departments
Department of Radio Electronics (UREL)
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