Detail výsledku

Transmission Line on Semiconductor Substrate with Distributed Amplification

POKORNÝ, M.; RAIDA, Z. Transmission Line on Semiconductor Substrate with Distributed Amplification. Radioengineering, 2010, vol. 19, no. 2, p. 307-312. ISSN: 1210-2512.
Typ
článek v časopise
Jazyk
anglicky
Autoři
Pokorný Michal, Ing., Ph.D., UREL (FEKT)
Raida Zbyněk, prof. Dr. Ing., CEITEC VUT (CEITEC VUT), UREL (FEKT)
Abstrakt

In order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in high-intensity electric field. The propagation properties of the fundamental mode are computed and the thermal analysis is performed. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.

Klíčová slova

GaAs, active, mictrostrip, millimeter-wave, FEM, Gunn, thermal, COMSOL

Rok
2010
Strany
307–312
Časopis
Radioengineering, roč. 19, č. 2, ISSN 1210-2512
Vydavatel
Ústav radioelektroniky, VUT v Brně
Místo
Brno
UT WoS
000278742400014
BibTeX 
@article{BUT49178,
  author="Michal {Pokorný} and Zbyněk {Raida}",
  title="Transmission Line on Semiconductor Substrate with Distributed Amplification",
  journal="Radioengineering",
  year="2010",
  volume="19",
  number="2",
  pages="307--312",
  issn="1210-2512"
}
Pracoviště
Ústav radioelektroniky (UREL)
Nahoru