Result Details
Amplification Enhancement of Gunn Effect Based Active Transmission Lines
POKORNÝ, M.; RAIDA, Z. Amplification Enhancement of Gunn Effect Based Active Transmission Lines. In Millimetre Wave Days Proceedings. Finland: Aalto Univerzity of Finland, 2011. p. 1-4.
Type
conference paper
Language
English
Authors
Pokorný Michal, Ing., Ph.D., UREL (FEEC)
Raida Zbyněk, prof. Dr. Ing., UREL (FEEC)
Raida Zbyněk, prof. Dr. Ing., UREL (FEEC)
Abstract
In this paper, we concentrate on the design and analysis of the active semiconductor traveling wave devices based on the Gunn effect in bulk GaAs semiconductor. The complex model of active device based on the macroscopic approximations of electron dynamics is analyzed by finite element method using COMSOL Multiphysics and the design issues to achieve an efficient amplification and device stability are formulated and discussed. Upon simulation results of the convectional active coplanar waveguide design based on the experimental work in [1],we propose more efficient solution.
Keywords
Gunn effect, Active transmission line, GaAs, COMSOL
Published
2011
Pages
1–4
Proceedings
Millimetre Wave Days Proceedings
Conference
Millimetre Waves Days
Publisher
Aalto Univerzity of Finland
Place
Finland
BibTeX
@inproceedings{BUT73083,
author="Michal {Pokorný} and Zbyněk {Raida}",
title="Amplification Enhancement of Gunn Effect Based Active Transmission Lines",
booktitle="Millimetre Wave Days Proceedings",
year="2011",
pages="1--4",
publisher="Aalto Univerzity of Finland",
address="Finland"
}
Departments