Detail výsledku
Amplification Enhancement of Gunn Effect Based Active Transmission Lines
POKORNÝ, M.; RAIDA, Z. Amplification Enhancement of Gunn Effect Based Active Transmission Lines. In Millimetre Wave Days Proceedings. Finland: Aalto Univerzity of Finland, 2011. p. 1-4.
Typ
článek ve sborníku konference
Jazyk
anglicky
Autoři
Pokorný Michal, Ing., Ph.D., UREL (FEKT)
Raida Zbyněk, prof. Dr. Ing., UREL (FEKT)
Raida Zbyněk, prof. Dr. Ing., UREL (FEKT)
Abstrakt
In this paper, we concentrate on the design and analysis of the active semiconductor traveling wave devices based on the Gunn effect in bulk GaAs semiconductor. The complex model of active device based on the macroscopic approximations of electron dynamics is analyzed by finite element method using COMSOL Multiphysics and the design issues to achieve an efficient amplification and device stability are formulated and discussed. Upon simulation results of the convectional active coplanar waveguide design based on the experimental work in [1],we propose more efficient solution.
Klíčová slova
Gunn effect, Active transmission line, GaAs, COMSOL
Rok
2011
Strany
1–4
Sborník
Millimetre Wave Days Proceedings
Konference
Millimetre Waves Days
Vydavatel
Aalto Univerzity of Finland
Místo
Finland
BibTeX
@inproceedings{BUT73083,
author="Michal {Pokorný} and Zbyněk {Raida}",
title="Amplification Enhancement of Gunn Effect Based Active Transmission Lines",
booktitle="Millimetre Wave Days Proceedings",
year="2011",
pages="1--4",
publisher="Aalto Univerzity of Finland",
address="Finland"
}
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