Detail výsledku
MATLAB SIMULINK MODEL OF THE 1ST GENERATION SWITCHED-CURRENT MEMORY CELL
Vrba Radimír, prof. Ing., CSc., RE-KancQ (RE), UMEL (FEKT)
The paper deals with the design of the first generation memory cell MATLAB model. There are described errors of the first generation switched current (SI) memory cell and also impact of the SI technique on the transfer function of the memory cell. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 m technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.
switched current, memory cell, errors
@inproceedings{BUT33976,
author="Michal {Pavlík} and Radimír {Vrba}",
title="MATLAB SIMULINK MODEL OF THE 1ST GENERATION SWITCHED-CURRENT MEMORY CELL",
booktitle="EDS' 09 IMAPS CS International Conference Proceedings",
year="2009",
pages="340--343",
publisher="Ing. Novotný nakladatelství",
address="Brno",
isbn="978-80-214-3933-7"
}